advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v so-8 compatible r ds(on) 8.5m low on-resistance i d 50a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.2 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w data & specifications subject to change without notice ap0803gmt-hf 5 halogen-free product 50 parameter rating drain-source voltage 30 continuous drain current 3 15 pulsed drain current 1 160 gate-source voltage + 20 continuous drain current 3 19 continuous drain current thermal data parameter 200809256 total power dissipation 29.7 1 storage temperature range operating junction temperature range -55 to 150 -55 to 150 total power dissipation 16.2 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s the pmpak 5x6 package is special for dc-dc converters application and the foot print is compatible with so-8 with backside heat sink. s s s g pmpak 5x6 d d d d
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 8.5 m ? ? ?
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 ap0803gmt-hf 0 20 40 60 80 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 0.0 1.0 2.0 3.0 4.0 5.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 10 20 30 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 4 12 20 28 36 246810 v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap0803gmt-hf 0 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = pdm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =15v v ds =18v v ds =24v 0 100 200 300 400 500 600 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90%
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